Luminescence of gadolinium gallium garnet epitaxial films under excitation by synchrotron radiation

The luminescence excited by synchrotron radiation in gadolinium gallium garnet single-crystal films grown by liquid-phase epitaxy from lead-and bismuth-containing solution melts on Gd3Ga5O12 substrates is investigated. It is shown that the luminescence intensity in the visible range of the spectrum depends on the type and concentration of impurity ions passing from the solvent into the film.