Method for optimizing semiconductor device ion injection technology

The invention relates to an optimization method for the semiconductor device ion implantation process; the method adopts a material chip experiment method to optimize the ion implantation process conditions in the semiconductor manufacturing process and can accelerate the device development speed and save the number of wafers. The method comprises the following steps: covering the wafer with photoresist; selecting the experiment region and carrying out the selective exposure and development of a first implantation region; carrying out a first ion implantation in the exposed region; removing the photoresist; covering the experiment region on the wafer with photoresist; carrying out the selective exposure and development of a second implantation region; carrying out a second ion implantation in the exposed region; removing the photoresist; accordingly, carrying out a required N-nd ion implantation, obtaining a plurality of wafer groups with different implantation conditions and optimizing the ion implantation process conditions through the collection of performance parameters.