Ultra-low Von and High Voltage 4H-SiC Heterojunction Diode

We demonstrate a heterojunction diode (HJD) fabricated with p + -type polycrystalline silicon on an n - -type epitaxial layer of 4H-SiC. The HJD achieved extremely low Von and high reverse blocking voltage compared with a SiC Schottky barrier diode (SBD). The HJD shows good diode characteristics for temperatures ranging up to 200°C. Measured switching characteristics of the HJD exhibit almost zero reverse recovery similar to that of the SBD.