Old Web
English
Sign In
Acemap
>
Paper
>
Transient charge-based model for SiGe HBTs
Transient charge-based model for SiGe HBTs
2009
Jacob
Dasgupta
Chakravorty
Keywords:
Optoelectronics
Charge (physics)
Transient (oscillation)
Bipolar junction transistor
transient analysis
Heterojunction bipolar transistor
Silicon-germanium
Materials science
numerical models
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]