Focused Ion Beam Lithography Using Ladder Silicone Spin-on Glass as a Positive Resist

Focused ion beam lithography using ladder silicone spin-on glass as a positive resist has been demonstrated. This lithographic technique utilizes the structural change of ladder silicone spin-on glass (LS-SOG) to a silicon-dioxide-like structure. A 60-nm-width space pattern and a 90-nm-diameter hole pattern have been fabricated using ion doses of 6.2 x 10 13 /cm 2 and 1.2 x 10 14 /cm 2 , respectively. The development mechanism and the sensitizing effect of post-exposure baking have been investigated using fourier transform infrared spectroscopy (FTIR).