4H-SiC Bulk Growth Using High-Temperature Gas Source Method

Our latest results of SiC bulk growth by High-Temperature Gas Source Method are given in this paper. Based on Mullins-Sekerka instability, optimal growth conditions to preclude dendrite crystals, which are one of the pending issues for high-speed bulk growth, was studied. First, the simulation studies showed that high temperature gradient in a growing crystal is required for high-speed bulk growth without dendrite crystals. Second, high-speed bulk growth was demonstrated under high temperature gradient.