A linear type composite tunneling mechanism through the gate field effect transistor and method of preparation

The present invention discloses a composite strip gate mechanism TFET and a preparation method, and the logic circuit belongs to the field of large integrated circuit CMOS FET (ULSI) of. The TFET by changing the morphology of the gate, a PN junction on both sides of the gate depletion effect stripe subthreshold characteristics such that the surface of the gate trench band increase, improved devices, using dual doped source region is introduced complex mechanisms to effectively improve the on-state current of the device, and designed to "work" of the active region can be largely suppressed word plow leak current from the two regions into the body portion between the doped source and drain regions doped, the source and drain comprising direct tunneling current and the current through, the short channel effect is suppressed, so that the device can be applied in a smaller size.