Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on (1 1 1)B GaAs

Abstract In this work, the effects of the substrate misorientation in the nitrogen incorporation in InGaAsN (1 1 1) B p–i–n diode structures grown by molecular beam epitaxy are discussed. The (1 1 1) B surfaces misoriented towards [2–1–1] are found to be more suitable to enhance the optical quality of the samples. We also found that the nitrogen incorporation is highly dependent on the growth temperature as well as on the V–III flux ratio. In addition to this, the optical properties and crystal quality of these structures depend strongly on the nitrogen content, as in the case of similar samples grown on (1 0 0) surfaces. High nitrogen contents (up to 3%) in InGaAsN layers grown on two different misoriented (1 1 1) B GaAs substrates are reported. Besides, low-temperature photoluminescence emission wavelengths longer than 1.4 μm are achieved using (1 1 1) B misoriented substrates.