Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates

Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.