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Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study
Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study
2020
Tsunashi Shimizu
Toru Akiyama
Kohji Nakamura
Tomonori Ito
Hiroyuki Kageshima
Masashi Uematsu
Kenji Shiraishi
Keywords:
Physical chemistry
Ab initio
Materials science
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