Temperature-dependent emission and lifetime measurements of tellurium(4+) doped in bis(tetraethylammonium) cis-dibromotetrachlorostannate(IV)

Temperature-dependent rise time and lifetime results by measuring the photon emission in the range 10-200 K were obtained on cis-[TeCl 4 Br 2 ] 2- doped in (ethyl 4 N) 2 -cis-[SnCl 4 Br 2 ] with the same molecular configuration (C 2υ ). The kinetics of energy excitation and relaxation are described by a three-level model containing transition rate constants the sizes of which are related to different symmetry selection rules between corresponding electronic levels