Light-emitting device, epitaxial wafer, and method for producing same

Provided are a light-emitting device and an epitaxial wafer with which it is possible to generate light of sufficiently high intensity using a type 2 MQW Group III-V compound semiconductor. The method is characterized by comprising a step for growing an active layer formed from a type 2 multi-quantum well (MQW) on a group III-V compound semiconductor substrate, wherein by means of the step for forming a type 2 multi-quantum well structure, the type 2 multi-quantum well structure is formed by fully metal organic vapor phase epitaxy, and the number of pairs of the type 2 multi-quantum well structure is 25 or greater.