Effect of oxygen aggregation processes on the recombining activity of 60° dislocations in Czochralski grown silicon

The interaction of dislocations with light elements like oxygen and carbon presents a variety of aspects which are of basic interest for the understanding of gettering processes, as well as for a deeper knowledge of the electrical and optical properties of dislocations. We report the results of a systematic investigation of the influence of the dislocations on the segregation of oxygen and of the effect of oxygen segregation on their electrical activities. The experiments were carried out on p‐type Czochralski silicon, in the 700–1100 °C temperature range. It has been shown that not only a direct oxygen‐dislocation interaction occurs, but also that a competition between homogeneous and heterogeneous segregation processes occurs, which influences the overall electrical properties of the samples as well.