Silicon Technology Applicable To Monolithic Millimeter Wave Sources

We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, unique secondary ion mass spectroscopy (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra-thin, reproducible wafers, and have resulted in the development of silicon hybrid circuits, thus paving the way to production of silicon monolithic integrated millimeter-wave sources.