Vertical organic field effect transistor: on–off state definition related to ambipolar gate biasing

We investigated a vertical organic field effect transistor (VOFET) behavior with an intermediate electrode formed by a tin (Sn) layer, whose growth presents a self-organized pattern grid with natural pores, fundamental to its operation. The choose of the materials to compose the channel formed by a fullerene (\(\text {C}_{60}\)) and a intermediate electrode of Sn brings a structure able to work with very low voltage and ambipolar gate biasing behavior, concomitantly. A explanation based on the importance of the roughness/pores in the intermediate electrode and the control of the energy barrier of the injection interface clarifies how to obtain the on–off state in unipolar VOFETs with ambipolar gate biasing. A theoretical basis support that when there is a low injection energy barrier inside and outside of the pores from a roughness intermediate electrode the electrical characterization its a combination of a very low voltage operation with a non negligible off-output current.