Si-implanted and disordered stripe-geometry AlxGa1-xAs-GaAs quantum well lasers

P. Gavrilovic,K. Meehan,L. J. Guido,N. Holonyak,V. K. Eu,Milton Feng,R. D. Burnham

Si-implanted and disordered stripe-geometry AlxGa1-xAs-GaAs quantum well lasers

1985

P. Gavrilovic
K. Meehan
L. J. Guido
N. Holonyak
V. K. Eu
Milton Feng
R. D. Burnham

The Si impurity is implanted into an Al x Ga1−x As‐GaAs quantum wellheterostructure to form, by impurity‐induced layer disordering and donor doping, a stripe‐geometry buried heterostructure laser.

Keywords:

Doping
Heterojunction
Gallium arsenide
Atomic physics
Superlattice
Laser
Quantum well laser
Optics
Quantum well
Semiconductor laser theory
Inorganic chemistry
Physics
Semiconductor device
Silicon
Ion implantation
Optoelectronics

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