THICKNESS OPTIMIZATION OF EFFICIENT GaInNAs / GaAs SINGLE QUANTUM WELL LASERS

The effect of the single quantum well thickness on the optical and electrical parameters of a GaInNAs/GaAs quantum-well lasers are presented. It was found that the material gain spectrum is red-shifted along with increment of the FWHM as the well-layer thickness is increased. Moreover, it has been observed that the photoluminescence spectrum intensity for various thicknesses of well-layer declines as the well-layer thickness increases. The mode spectrum for different well-layer thickness is presented. The threshold current density and slope efficiency are measured and found to be decreased with the thickness increment of the well-layer.