Advanced III–V nanowire growth toward large-scale integration

Abstract We summarize the synthesis of the group III–V semiconductor nanowires (NWs) (arsenides, phosphides, and antimonides) via various mechanisms and methods. Advances in understanding of bottom-up growth enable a precise control of crystalline structure, doping, heterojunction formation, and heteroepitaxial growth, facilitating implementation of III–V NWs into both individual-NW and large-scale functional systems. With the growing demand of device performance enhancement and downscaling, III–V NWs open up a new range of possibilities in engineering and investigating NW-based electronic and photonic elements beyond the conventional advantages of III–V materials like high carrier mobility and versatility in bandgap engineering.