Conformal isolation of high-aspect-ratio TSVs using a low-ź dielectric deposited by filament-assisted CVD

In this study, SiOCH thin films were deposited by filament assisted chemical vapor deposition using methyltriethoxysilane. It is shown that annealing the films at 400°C (with or without UV-assist) is required to meet specifications in terms of dielectric properties (low-ź values and good insulating properties). This work highlights FACVD as a promising technique to allow the deposition of conformal dielectric thin films within High-Aspect-Ratio TSVs. Step coverage higher than 70% were obtained within 10ź80µm TSVs. Then, FACVD deposited SiOCH films can be considered as a promising candidate for use within TSV technologies. Display Omitted A filament assisted CVD (FACVD) method to isolate high-aspect-ratio TSV's is investigated.SiOCH thin films are deposited using MTES as precursor.Post-annealed films exhibit improved electrical characteristics such as low dielectric constant and low leakage current.Very high step coverages are obtained (i.e.70% for AR 8:1).FACVD deposited SiOCH films are promising candidates for use within TSV technologies.