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(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design
(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design
2016
Eugene A. Fitzgerald
Kun-Ho Lee
Soon-Fatt Yoon
S. J. Chua
Chuan Seng Tan
Geok Ing Ng
Xiaohong Joe Zhou
Xiao Gong
Joseph Sylvester Chang
L.S. Peh
Chirn Chye Boon
D. A. Antoniadis
Sachin Yadav
Xuan Sang Nguyen
David Kohen
Annie Kumar
Li Zhang
Kwang Hong Lee
Zongying Liu
S.B. Chain
T Ge
Pilsoon Choi
Keywords:
Speech recognition
Micrometre
Electronic engineering
High-electron-mobility transistor
CMOS
Materials science
Optoelectronics
cmos process
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