Old Web
English
Sign In
Acemap
>
Paper
>
InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
2021
L. E. Velikovskiy
P. E. Sim
O. I. Demchenko
N. E. Kurbanova
I. A. Filippov
A. V. Sakharov
W. V. Lundin
E. E. Zavarin
D. A. Zakheim
D S Arteev
M. A. Yagovkina
A. F. Tsatsulnikov
Keywords:
microwave applications
algan gan
High-electron-mobility transistor
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
17
References
0
Citations
NaN
KQI
[]