X-Ray High-Resolution Diffractometry for Studies of Diffuse Scattering in Semiconductor Materials

Older and newest articles on X-ray diffuse scattering are reviewed and the perspectives of further high-resolution diffractometry studies for specific semiconductor materials are demonstrated. The importance of correlations of spatial distributions of microdefects as well as correlation functions of the incident beam (partial-coherence phenomenal is stressed. Other problems include the cluster expansion and Fourier transforms of these correlation functions which should improve the agreement between the simulated and experimental results.