Nano Pattern on n‐Si (100) Surface by Ion Irradiation

Nano structuring of silicon surface by low energy ion irradiation is reported. Semi insulating n‐Si (100) has been irradiated by 50 keV Ar+ ion beam at an angle of 50° with respect to surface normal. The irradiated sample’s surfaces were analyzed by Atomic Force Microscopy. Irradiation caused formation of nano‐sized elliptical dots aligned in rows perpendicular to ion beam direction at fluence of 1×1017 ions/cm2. At higher fluences of 3×1017 ions/cm2 and 7×1017 ions/cm2 self organized ripples were developed on the surface.