A quantitative study of nitrogen content influence on the carrier mobility in GaNxAs1-x (0.008<x<0.022)

In this article we report our theoretical analysis of the electrical transport properties for experimental data on three Si-doped dilute nitride GaN x As 1-x (0.008

Keywords:

• Analytical chemistry
• Phonon
• Electron mobility
• Chemistry
• Atomic physics
• Ionization
• Scattering
• Experimental data
• Impurity
• Dislocation
• Nitride
• Electron scattering
• Atmospheric temperature range

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