Distorted field scattering in a nanoscale MOSFET in the ballistic transport regime

This investigation studies theoretically transmissions and conducting currents in a nanometre field effect transistor in a distorted electric field. In the ballistic transport regime, the momentum conservation does not apply in the direction perpendicular to the carrier transport owing to the presence of a distorted electric field that is caused by the drain and gate biases associated with the fringe effect. This scattering occurs in both long- and short-channel field effect transistors, and is particularly large in nanometre devices that operate in the ballistic transport regime.