High-power high-brightness high-reliability laser diodes emitting at 800-1000 nm

In this paper we report the development of high power high brightness semiconductor laser chips using a combination of quantum well intermixing (QWI) and novel laser designs including laterally unconfined non-absorbing mirrors (LUNAM). We demonstrate both multi-mode and single-mode lasers with increased power and brightness and reliability performance for the wavelengths of 980 nm, 940 nm, 830 nm and 808 nm.