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InGaAs tri-gate MOSFETs with MOVPE regrown source/drain
InGaAs tri-gate MOSFETs with MOVPE regrown source/drain
2014
Kanazawa Toru
Mishima Yuichi
Kinoshita Haruki
Uehara Eiji
Miyamoto Yasuyuki
Keywords:
Multigate device
Metalorganic vapour phase epitaxy
MOSFET
Electronic engineering
Materials science
Optoelectronics
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