Electron‐paramagnetic‐resonance study of s‐d exchange in PbSnMnTe
1991
Electron‐paramagnetic‐resonance (EPR) measurements were performed in the temperature range T=1.3–100 K in samples of the semimagnetic Pb1−x−ySnyMnxTe semiconductor with carrier concentrations p=1.6×1019−1.4×1021 cm−3. Magnetization and Hall effect were also measured. Compositions in the range 0.12carrier concentration on the temperature dependence of the width of EPR line (ΔH). A very rapid increase of ΔH with increasing temperature is observed in the samples with high carrier concentrations: p=5.5, 6.8, and 14×1020 cm−3. The magnitude of this effect is strongly reduced in the sample with the carrier concentration p=2.85×1020 cm−3. In n‐ and p‐type samples with the lowest carrier concentrations (p≂2×1019 cm−3), no temperature dependence of ΔH is observed at high temperature. The strong effect of the carrier concentration on ΔH can be understood, in agreement with magnetic measurements, as a result of the two‐carrier (light...
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