Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties
2017
Articles devoted to methods for improving the structural quality of epitaxial films, which utilize the high-temperature interaction between hydrogen and silicon as well as solid-phase recrystallization process, are reviewed. A correlation between the quality of the epitaxial layer and the radiation resistance of the microcircuits obtained thereon is also considered. A method for creating capture/recombination centers in sapphire during the implantation of helium ions is proposed, yielding high-quality radiation-resistant silicon-on-sapphire films.
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