Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate

Abstract Micro-morphology of Si surface treated by chemical solution has been observed by atomic force microscope, and its relationship with electronic property of SiO 2 /Si structure has been investigated. Well-ordered atomic steps and flat terraces were observed on some Si surfaces. SiO 2 film has been prepared on the substrates at low temperatures of 300°C by photo-induced chemical vapor deposition (photo-CVD) method. Interface state densities of the SiO 2 /Si structures become less on the atomically flat Si than those on rough Si. In addition, breakdown voltage of the SiO 2 films were measured to clarify the relation of the insulation property with roughness. A and B modes of the breakdown have been observed in as-deposited sample, but is independent on surface roughness. These failures can be reduced by O 2 annealing.