Thermal model for three-dimensional integrated circuits with integrated MLGNR-based TSV

This paper applies the multi-layer graphene nanoribbon as a new prospective filler material for through silicon via to solve the complex heat problems in the 3-D integrated circuits. An equivalent thermal model for 3-D integrated circuits with the MLGNR-based through silicon via is presented in this work, which take lateral heat transfer of through silicon via into account. The experimental results show that the heat transfer performance of MLGNR-based through silicon via is better than the conventional Cu-based through silicon via. Furthermore, it is found that the temperature predicted by the proposed model are in good accordance with the ANSYS simulation, and the maximum relative deviation is less than 4.0%