Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects

The present paper deals with the modeling of the simultaneous impact of temperature and applied hydrostatic pressure on the electronic characteristics and electrical parameters in In0.2Ga0.8N/GaN p-i-n solar cells. The energy conduction band is calculated with a self-consistent model coupled with the photovoltaic parameters taking into consideration the spontaneous and piezoelectric polarizations. A new efficient numerical model based on the difference finite method is well suited to theoretical and experimental data. The results reveal that the hydrostatic pressure has a beneficial effect on the behavior of cells on the N-face configuration, whereas the elevated temperature has a destructive impact on these devices.