A 1–4 GHz low noise amplifier in 0.5-μm E-Mode InGaAs pHEMT technology

This paper presents a 1–4 GHz low noise amplifier (LNA) for broadband communication system. A capacitive feedback gain compensation circuit is proposed to increase the high frequency gain. The LNA exhibits a voltage gain of 20–23 dB, a noise figure of 1.8–2.3 dB during 1–4 GHz frequency range. The input S11 is −13dB∼-10dB and the output S22 is −18dB∼-10dB. The proposed LNA is realized in 0.5-μm Gate-Length E-Mode InGaAs pHEMT Process and occupies 0.96 mm 2 area. The power consumption is 250 mW with 5 V supply.