Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF6 and SiH4 Mixture

Precise control of the interface reaction between adsorbates and the solid surface is now becoming a key issue for thin film growth technology. In this paper, the importance of electronic interaction in selective thin film growth has been demonstrated for the first time for the growth of tungsten films. It has been found that the dissociation of adsorbed molecules due to electron transfer from the substrate plays a crucial role in realizing the selectivity of tungsten growth.