The Correlation between D.C.Parameters of RTD and It's Material Structures in the RTD/HEMT Monolithic Integration

In order to study the correlation between device D.C.parameters and material structures,three kinds of GaAs based RTD material structures have been designed.By all the same device processing,three kinds of RTD have been fabricated from the three material structures,and the 9 D.C.parameters of them have been measured.The measured results have been compared and analyzed.Finally,the suggestion on how to treat the current matching between RTD and HEMT in the RTD/HEMT integration has been given.