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Effect of ramping-up rate on end of range defect in multielement molecular-ion (CH 3 O)-implanted silicon wafers
Effect of ramping-up rate on end of range defect in multielement molecular-ion (CH 3 O)-implanted silicon wafers
2019
Ryo Hirose
Ayumi Onaka-Masada
Ryosuke Okuyama
Takeshi Kadono
Satoshi Shigematsu
Kouji Kobayashi
Akihiro Suzuki
Yoshihiro Koga
Jiro Matsuo
Kazunari Kurita
Keywords:
Polyatomic ion
Wafer
Analytical chemistry
Physics
Optoelectronics
Optics
Correction
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