Implantation and thermal annealing behaviour of Bi implanted into Al/Ti and Al/V bilayer structures

Abstract Two bilayer systems, (Al(1500 A)/Ti and Al(500 A)/V systems) were implanted with Bi at energies of 600 and 150 keV, respectively. The implanted depth distributions are in both systems very well reproduced by calculations using the Monte Carlo TRIM simulation method. After anneal up to 400°C (Al/Ti) and 550°C (Al/V) the depth profiles still resemble the as-implanted ones. It is concluded that the interface region acts as a trapping center for the implanted ions.