Relaxations in Ba{sub 2}BiTaO{sub 6} ceramics investigated by impedance and electric modulus spectroscopies

Highlights: Black-Right-Pointing-Pointer We have confirmed that the relaxation observed in Ba{sub 2}BiTaO{sub 6} is due to the conduction mechanism. Black-Right-Pointing-Pointer The conduction mechanism is the oxygen vacancies hopping. Black-Right-Pointing-Pointer We have explained because the activation energy for the Ba{sub 2}BiTaO{sub 6} is lower than observed for Ba{sub 2}BiSbO{sub 6} with basis in zero-point energy of both materials. Black-Right-Pointing-Pointer We have showed that a minor secondary phase is a minor secondary phase, which is common when the BBTO is obtained by ceramic method under air, does not change significantly the electrical properties of BBTO. -- Abstract: Impedance spectroscopy analysis of the dielectric properties of a Ba{sub 2}BiTaO{sub 6} ceramic was performed in the temperature range from room temperature to 500 K. The sample was prepared using conventional solid state synthesis under air and the X-ray diffraction shows the presence of Ba{sub 5}Ta{sub 4}O{sub 15} as a minor secondary phase (0.09%). The impedance data clearly show contributions of the grain and grain boundary. The results indicate that the conduction in Ba{sub 2}BiTaO{sub 6} is due to hopping of oxygen vacancies and that the impurities not influence the conduction mechanism.