Properties of CdS:In thin films grown by ionized deposition

Abstract Cadmium sulfide thin films doped with indium have been grown by ionized deposition on glass substrates. Crystallographic characteristics of CdS films have been investigated by X-ray diffraction and by measurement of their optical and electrical properties. The c -axis of polycrystalline CdS film is preferentially oriented normal to the glass substrate even at such a low substrate temperature as 60°C. However, the c -axis orientation changes to parallel to the substrate at a substrate temperature of 350°C in the case of ionized deposition. Transmittance of the CdS films increases from less than 5% to 60% by ionization at a substrate temperature of 60°C. Resistivity of the CdS:In films depends on substrate temperature; a minimum resistivity of 6.4×10 -3 Ωcm is obtained at a substrate temperature of 200°C.