1D Charge Carrier Dynamics in GaAs Quantum Wires Carrier Capture, Relaxation, and Recombination

Time- and spatially resolved luminescence or GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates is reported. The effective width or these nanoscopic wires is as small as 9.5 nm, giving rise to a separation or 45 meV for the quasi-one-dimensional conduction subbands. The QWRs exhibit high luminescence efficiency and the radiative recombination lifetime or the quantum confined carriers is round to be larger than 310 ps. Combined spectral-time-resolved experiments directly visualize the carrier capture process and the thermalization or the 1D carriers in the QWR structures