Complementary patterning demonstration with e-beam direct writer and spacer DP process of 11nm node

We successfully demonstrate complementary patterning with self-aligned double patterning (SADP) and currently used e-beam direct writer (EBDW). The complementary patterning is achieved with not only positive type pattern for gate layer but also negative type one for 1st metal (M1) layer at 11nm node. The e-beam exposure is performed by Advantest. SADP process before e-beam exposure and etching after e-beam exposure are performed by Tokyo Electron. This paper also reports EBDW applicability to complementary patterning for 8nm node and beyond in the light of overlay and resolution, and improving plans including shot number reduction.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.