Uncooled rectifying and resistive type sub-THz direct detection detectors. Upper limit performance

Performance of terahertz THz field effect transistor (FET) direct detection rectifying detectors operating in the broadband detection regime taking into account some extrinsic parasitics and detector-antenna impedance matching is considered. Si metal oxide semiconductor FET (MOSFET) and GaAlN/GaN heterojunction FET (HFET) THz detectors in comparison with Schottky barrier diode (SBD) ones are discussed. Optical responsivity Wopt and optical noise equivalent power NEPopt were estimated. The mercury-cadmium-telluride (MCT) hot electron bolometers (HEBs) as THz detectors also were considered.