Technique for patterning differently strained layers which are formed over the transistors, through improved Ätzsteuerungsstrategien

method with a processing of a substrate (201) comprising: are formed over the substrate (201); forming a first stress-inducing layer (230) via a first transistor (210T) and a second transistor (220T), said first and second transistors (220T 210T); Removing a portion of the first stress-inducing layer (230) over the second transistor (220T) is located; Forming a second stress-inducing layer (240) on the first stress-inducing layer (230); Removing a portion of the second stress-inducing layer (240) via the first transistor (210T) is arranged, on the basis of an etching process; Forming a test structure at a measuring point with the first and second stress-inducing layer (230, 240) over the substrate (201), wherein the forming of the test structure, the patterning of the second stress-inducing layer (240) by the etching process to form a lattice structure which lines (230G, 240G) and distances (240S) which comprises; Obtaining optical measurement data by a scattering measurement method for the ...