Zinc-oxide-based metal oxide semiconductor (MOS) element on graphite substrate

The invention relates to a zinc-oxide-based metal oxide semiconductor (MOS) element on a graphite substrate. The zinc-oxide-based MOS element on the graphite substrate is characterized in that adopting a radio frequency magnetron sputtering method, an insulating layer (such as SiO2, Ga2O3, ZnMgo, VO2 or Mgo) and a semiconductor layer ZnO thin film are grown on the surface of graphite substrate material which has a high conductivity property and a heat-conducting property in sequence to prepare and obtain the zinc-oxide (ZnO) based MOS element. Radio frequency magnetron sputtering power, vacuum degree of a cavity, temperature of the substrate and an annealing process of follow-up elements are controlled, effective control to crystal quality of the prepared and obtained insulating layer and semiconductor ZnO thin film can be achieved, and control to electrical properties of the ZnO based MOS element is further achieved. The technology of the zinc-oxide-based MOS element on the graphite substrate is simple, easy to operate and low in cost.