Correlation of the electrical properties with interface crystallography in the Ti/3C-SiC system

Characterizations were performed to determine the properties of Ti contacts to 3C-SiC. Both carbides and silicides were studied carefully following heat treatments from 600 to 1000°C. The peak associated with silicides in the Auger Si spectrum is identified. Structural and chemical analyses using Auger electron spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction revealed how the electrical properties of the contacts correlate with the interface chemistry. It is found that the crystalline C49 TiSi2 formed at the interface is closely related to the lowering in the contact resistance. The barrier height decreases from 0.53 eV for as-deposited films to 0.44 eV with annealing. The contacts maintained stable electrical characteristics after annealing at 600°C for extended periods of time.