EuS ferromagnetic semiconductor films grown epitaxially on silicon

Abstract Results on EuS(111), (100), and (110) single crystal films, (EuS/SrS)(111) layered structures, Eu x Sr 1- x S mixed crystal films, and EuS/Pb sandwiches grown by molecular beam epitaxy (MBE) on substrates of silicon crystals are reviewed. From electron diffraction and Rutherford backscattering studies their stoichiometry and crystal perfection are shown to be of good MBE quality. The magnetic properties reveal the expected magnetic anisotropy axes. The remagnetization and susceptibility behaviour of layered and mixed films are compared with typical single crystal film and bulk data. First results on coupled states of EuS/Pb sandwich films are reported.