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Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS
Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS
2002
Kohei Sugihara
Takumi Nakahata
Takuji Matsumoto
Shigenobu Maeda
Shigeto Maegawa
K. Ota
H. Sayama
Hidekazu Oda
Takahisa Eimori
Y. Abe
Tatsuo Ozeki
Yasuo Inoue
T. Nishimura
Keywords:
Silicon on insulator
CMOS
Nanotechnology
Electronic engineering
Materials science
Morphology (linguistics)
soi cmos
Optoelectronics
smooth surface
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