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An effect of semiconductor surface shape on gate breakdown voltage of a VMOS transistor
An effect of semiconductor surface shape on gate breakdown voltage of a VMOS transistor
1983
T Sekigawa
Y. Hayasi
Keywords:
Electronic engineering
VMOS
Transistor
Overdrive voltage
Static induction transistor
Time-dependent gate oxide breakdown
Breakdown voltage
Chemistry
Avalanche diode
Semiconductor
Optoelectronics
Correction
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