Electron spectroscopy study of the FeSi(111) and FeSi2Si(111) interface formation

Abstract In this work, we characterize the reaction of thin iron films deposited on Si(111) substrates upon annealing in the temperature range 200–600°C with Auger electron spectroscopy, electron energy loss spectroscopy, low energy electron diffraction and scanning electron microscopy. We particularly stress the conditions of formation and epitaxy of the disilicide FeSi 2 .