HMOS III technology

A third-generation single-poly high-performance NMOS technology has been developed. The technology features scaled MOS devices with 250 /spl Aring/ gate and 0.25 pJ speed-power product. The technology integrates advanced processing capabilities in lithography and dry etching to achieve a depletion-load static memory cell size of 0.98 mils/SUP 2/. A 4K static RAM test vehicle has been fabricated with sub-15 ns access time. The technology has a major application in the shrink of existing microcomputers designed on previous HMOS technologies.